GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet

Journal Article · Wed Oct 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92050· OSTI ID:5011124

Coldren, L A; Iga, K; Miller, B I; Rentschler, J A

We report the first use of reactive-ion etching (RIE) to form mirror facets on GaInAsP/Inp double-heterostructure (DH) lasers (lambdaapprox.1.3 ..mu..m). The RIE, performed with a Cl/sub 2/:O/sub 2/ gas mixture, provides vertical etched walls with no undercutting. Initial laser results demonstrate that quasi-single-mode operation and reasonable threshold currents are possible.

• Research Organization: Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5011124
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 37:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LASER MIRRORS
FABRICATION
SEMICONDUCTOR LASERS
CHLORINE
CONFIGURATION
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GASES
INDIUM PHOSPHIDES
INFRARED RADIATION
IONS
MIXTURES
OSCILLATION MODES
OXYGEN
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
DATA
DISPERSIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
FLUIDS
GALLIUM COMPOUNDS
HALOGENS
INDIUM COMPOUNDS
INFORMATION
LASERS
MIRRORS
NONMETALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)