1. 5. mu. m GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

Journal Article · Mon Apr 23 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103151· OSTI ID:7120680

Matsui, T; Ohtsuka, K; Sugimoto, H; Abe, Y; Ohishi, T ^[1]

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1. Central Research Laboratory, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661, Japan (JP)

A 1.5 {mu}m GaInAsP/InP buried-heterostructure laser diode was fabricated by reactive ion etching using a mixture of ethane and hydrogen for the formation of mesa stripe. Blocking layers were regrown on the dry etched wafers by liquid phase epitaxy. Continuous-wave operation was obtained at room temperature. A threshold current as low as 15 mA was achieved, which is superior to that of the same structure laser diode fabricated by conventional chemical etching.

• OSTI ID: 7120680
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:17; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING
THRESHOLD CURRENT