Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
Two types of buried-stripe double-heterostructure GaInAsP/InP diode lasers have been fabricated. Room-temperature cw operation has been achieved for junction-defined devices emitting at 1.21 and 1.25 ..mu..m.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 7230562
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 30:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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