GaInAsP/InP double-heterostructure lasers

Patent · Tue Sep 01 00:00:00 EDT 1981

OSTI ID:5879003

Hsieh, J J

Double-heterostructure (Dh) diode lasers based upon very thin epitaxial layers of Ga/sub x/In1-/sub x/AsYP1-Y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such lasers involves the successive growth, on an InP substrate, of an InP buffer layer, the GaInAsP active layer and an InP top barrier layer using liquid phase epitaxy techniques to grow these layers from supercooled solutions. Stripe geometry lasers can be fabricated from these materials which emit in the 1-1.3 ..mu..m range and are capable of cw operation for extended periods at room temperature.

• Assignee: Massachusetts Institute Of Technology
• Patent Number(s): US 4287485
• OSTI ID: 5879003
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DESIGN
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LAYERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS