Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1. 1. mu. m

Journal Article · Tue Jun 15 04:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.88645· OSTI ID:7286554

Hsieh, J J; Rossi, J A; Donnelly, J P

Room-temperature cw operation has been achieved for stripe-geometry double-heterostructure Ga/sub 0/./sub 12/In/sub 0/./sub 88/As/sub 0/./sub 23/P/sub 0/./sub 77//InP diode lasers emitting at 1.1 ..mu..m. The heterostructures were grown by liquid-phase epitaxy on melt-grown InP substrates, and stripes were defined by using proton bombardment to produce high-resistance current-confining regions. (AIP)

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 7286554
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 28:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
BEAMS
EFFICIENCY
EMISSION SPECTRA
ENERGY
EPITAXY
LASERS
NUCLEON BEAMS
OPERATION
PARTICLE BEAMS
PROTON BEAMS
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD ENERGY