Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 $mu$m

Journal Article · Mon Mar 01 04:00:00 EST 1976 · Appl. Phys. Lett., v. 28, no. 5, pp. 283-285

OSTI ID:4028081

Hsieh, J J

Double-heterostructure Ga$sub 0$$.$$sub 12$In$sub 0$$.$$sub 8$$sub 8$As$sub 0$$.$$sub 23$$P$$sub 0$$.$$sub 77$/InP diode lasers emitting at 1.1 $mu$m, with room- temperature pulsed thresholds as low as 2.8 kA/cm$sup 2$, have been fabricated by liquid-phase epitaxy on melt-grown InP substrates. (AIP)

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• NSA Number: NSA-33-025760
• OSTI ID: 4028081
• Journal Information: Appl. Phys. Lett., v. 28, no. 5, pp. 283-285, Journal Name: Appl. Phys. Lett., v. 28, no. 5, pp. 283-285; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

*SEMICONDUCTOR LASERS-- OPERATION
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EMISSION SPECTRA
EPITAXY
FABRICATION
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PULSES
SEMICONDUCTOR DIODES
THRESHOLD ENERGY