GaInAsP/InP double heterostructure lasers emitting at 1. 5. mu. m grown by chemical beam epitaxy
Double heterostructure lasers of Ga/sub x/In/sub 1-//sub x/As/sub 1-//sub y/P/sub y/ lattice matched to InP and emitting at 1.55 ..mu..m have been grown by chemical beam epitaxy (CBE). Broad-area lasers fabricated from these wafers had pulsed room-temperature threshold current densities J/sub th/ and differential quantum efficiencies that are similar to the best results obtained from wafers grown by liquid phase epitaxy and metalorganic chemical vapor deposition. The lowest J/sub th/ obtained was 1 kA/cm/sup 2/ with an active layer thickness of 0.14 ..mu..m. Differential quantum efficiencies were --15--18% per facet. Lasing was obtained with these broad-area lasers up to 106 /sup 0/C with relatively weak degradation of quantum efficiency. Excellent device uniformity and wafer-to-wafer reproducibility were obtained with CBE. The method appears at this yet early stage to be an attractive approach to GaInAsP epitaxy.
- Research Organization:
- ATandT Bell Laboratories, Holmdel, New Jersey 07733
- OSTI ID:
- 6945644
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:2; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DATA
DIMENSIONS
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THICKNESS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY