Novel technique to fabricate GaInAsP/InP buried heterostructure laser diodes
Journal Article
·
· Appl. Phys. Lett.; (United States)
A chemical etching process to obtain a double heterostructure of InP-GaInAsP-InP with a very narrow active layer width is proposed in which three layers are etched preferentially. The quaternary layer works as the inner etching mask; the cladding layers above and below the active layer show reversed-mesa and normal-mesa shapes, respectively. The method is used to fabricate a buried heterostructure laser which lases at 1.3 ..mu..m on the p-type InP substrate. The fundamental lateral mode operation with threshold current as low as 15 mA is achieved with 0.8-..mu..m active layer width.
- Research Organization:
- Research Laboratory, OKI Electric Industry Company, Ltd., Hachioji, Tokyo 193, Japan
- OSTI ID:
- 6592607
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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