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Title: 100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4993888· OSTI ID:1393377
 [1];  [2];  [2];  [2];  [3]
  1. North Carolina State Univ., Raleigh, NC (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. North Carolina State Univ., Raleigh, NC (United States)

Here, InGaAsP/InGaP quantum well (QW) structures are promising materials for next generation photovoltaic devices because of their tunable bandgap (1.50-1.80 eV) and being aluminum-free. However, the strain-balance limitations have previously limited light absorption in the QW region and constrained the external quantum efficiency (EQE) values beyond the In0.49Ga0.51P band-edge to less than 25%. In this work, we show that implementing a hundred period lattice matched InGaAsP/InGaP superlattice solar cell with more than 65% absorbing InGaAsP well resulted in more than 2x improvement in EQE values than previously reported strain balanced approaches. In addition, processing the devices with a rear optical reflector resulted in strong Fabry-Perot resonance oscillations and the EQE values were highly improved in the vicinity of these peaks, resulting in a short circuit current improvement of 10% relative to devices with a rear optical filter. These enhancements have resulted in an InGaAsP/InGaP superlattice solar cell with improved peak sub-bandgap EQE values exceeding 75% at 700 nm, an improvement in the short circuit current of 26% relative to standard InGaP devices, and an enhanced bandgap-voltage offset (Woc) of 0.4 V.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1393377
Alternate ID(s):
OSTI ID: 1376975
Report Number(s):
NREL/JA-5J00-70132
Journal Information:
Applied Physics Letters, Vol. 111, Issue 8; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

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Cited By (2)

An approach towards the promotion of Kesterite solar cell efficiency: The use of nanostructures journal September 2019
Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy journal November 2018