Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells

Conference · Mon Nov 05 00:00:00 EST 2018

DOI:https://doi.org/10.1109/PVSC.2017.8366528· OSTI ID:1558344

Sayed, Islam ^[1]; Jain, Nikhil ^[1]; Steiner, Myles A  ^[1]; Geisz, John F ^[1]; Bedair, Salah M. ^[2]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
2. North Carolina State University

InGaAsP/InGaP quantum well (QW) structure is a potential candidate for subcells in next-generation multijunction solar cells because of its tunable bandgap (1.5-1.8 eV). However, the insufficient light absorption in the QWs has previously limited the sub-bandgap quantum efficiency (QE) to less than 25%. We report on the development of InGaAsP/InGaP superlattice solar cell with improved sub-bandgap QE exceeding 75% and bandgap-voltage offset of 0.40 V. The enhancements were accomplished by reducing the background doping in the QW region, monitoring the stress evolution during growth, modifying the QW design to grow thicker wells and processing the devices with optical reflector to enhance light absorption.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1558344
• Report Number(s): NREL/CP-5900-68863
• Resource Relation: Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 25-30 June 2017, Washington, D.C.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
42 ENGINEERING
bandgap engineering
InGaAs
InGaP
quantum wells
III-V
solar cells