InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Hashem, Islam E.; Carlin, C. Zachary; Hagar, Brandon G.; Colter, Peter C.; Bedair, S. M.

doi:10.1063/1.4943366

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Journal Article · Fri Mar 04 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4943366· OSTI ID:1470319

Hashem, Islam E. ^[1]; Carlin, C. Zachary ^[2]; Hagar, Brandon G. ^[2]; Colter, Peter C. ^[2]; Bedair, S. M. ^[2]

North Carolina State Univ., Raleigh, NC (United States); North Carolina State Univ., Raleigh, NC (United States)
North Carolina State Univ., Raleigh, NC (United States)

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In_xGa_1–xAs_1–zP_z/In_yGa_1–yP (x > y) and In_xGa_1–xP/In_yGa_1–yP (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In_xGa_1–xAs_1–zP_z/In_yGa_1–yP can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). In conclusion, the effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.

View Accepted Manuscript (DOE)

Research Organization:: North Carolina State Univ., Raleigh, NC (United States)

Sponsoring Organization:: USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0005403

OSTI ID:: 1470319

Alternate ID(s):: OSTI ID: 1240310
OSTI ID: 22597033

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 119; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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