InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.; Colter, Peter C.

doi:10.1063/1.4943366

Title: InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Journal Article · Mon Mar 07 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4943366· OSTI ID:22597033

Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.; Colter, Peter C.

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P (x > y) and In{sub x}Ga{sub 1−x}P/In{sub y}Ga{sub 1−y}P (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.

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OSTI ID:: 22597033

Journal Information:: Journal of Applied Physics, Vol. 119, Issue 9; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979

Country of Publication:: United States

Language:: English

References (36)

100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells: 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells Fujii, Hiromasa; Toprasertpong, Kasidit; Wang, Yunpeng Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 7 https://doi.org/10.1002/pip.2454	journal	December 2013
Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency: Wafer bonded four-junction concentrator solar cells with 44.7% efficiency Dimroth, Frank; Grave, Matthias; Beutel, Paul Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 3 https://doi.org/10.1002/pip.2475	journal	January 2014
Defects in epitaxial multilayers Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 32, Issue 2 https://doi.org/10.1016/0022-0248(76)90041-5	journal	February 1976
Immiscibility and spinodal decomposition in III/V alloys Stringfellow, G. B. Journal of Crystal Growth, Vol. 65, Issue 1-3 https://doi.org/10.1016/0022-0248(83)90086-6	journal	December 1983
New approaches for high efficiency cascade solar cells Katsuyama, T.; Tischler, M. A.; Moore, D. Solar Cells, Vol. 21, Issue 1-4 https://doi.org/10.1016/0379-6787(87)90139-6	journal	June 1987
Molecular beam epitaxy of strain-compensated quantum-well intersubband photodetectors Bacher, K.; Massie, S.; Seaford, M. Journal of Crystal Growth, Vol. 175-176 https://doi.org/10.1016/s0022-0248(96)01007-x	journal	May 1997
Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves ^† Ekins-Daukes, N. J.; Kawaguchi, K.; Zhang, J. Crystal Growth & Design, Vol. 2, Issue 4 https://doi.org/10.1021/cg025502y	journal	July 2002
Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates El‐Masry, N. A.; Tarn, J. C. L.; Bedair, S. M. Applied Physics Letters, Vol. 55, Issue 14 https://doi.org/10.1063/1.101581	journal	October 1989
Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs Cunningham, J. E.; Goossen, K. W.; Williams, M. Applied Physics Letters, Vol. 60, Issue 6 https://doi.org/10.1063/1.106550	journal	February 1992
Strain-balanced GaAsP/InGaAs quantum well solar cells Ekins-Daukes, N. J.; Barnham, K. W. J.; Connolly, J. P. Applied Physics Letters, Vol. 75, Issue 26 https://doi.org/10.1063/1.125580	journal	December 1999
The influence of surface segregation on the optical properties of quantum wells de la Cruz, G. Gonzalez Journal of Applied Physics, Vol. 96, Issue 7 https://doi.org/10.1063/1.1789628	journal	October 2004
Physics of Semiconductor Devices Shur, Michael; Singh, Jasprit Physics Today, Vol. 43, Issue 10 https://doi.org/10.1063/1.2810727	journal	October 1990
Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells Henry, C. H. Journal of Applied Physics, Vol. 51, Issue 8 https://doi.org/10.1063/1.328272	journal	August 1980
Material parameters of In _{1− x} Ga _x As _y P _{1− y} and related binaries Adachi, Sadao Journal of Applied Physics, Vol. 53, Issue 12 https://doi.org/10.1063/1.330480	journal	December 1982
Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells Ji, G.; Huang, D.; Reddy, U. K. Journal of Applied Physics, Vol. 62, Issue 8 https://doi.org/10.1063/1.339299	journal	October 1987
Growth and characterization of InGaAs/GaAsP strained layer superlattices Katsuyama, T.; Bedair, S. M.; Giles, N. C. Journal of Applied Physics, Vol. 62, Issue 2 https://doi.org/10.1063/1.339773	journal	July 1987
Will we exceed 50% efficiency in photovoltaics? Luque, Antonio Journal of Applied Physics, Vol. 110, Issue 3 https://doi.org/10.1063/1.3600702	journal	August 2011
Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices Toledo, Nikholas G.; Friedman, Daniel J.; Farrell, Robert M. Journal of Applied Physics, Vol. 111, Issue 5 https://doi.org/10.1063/1.3690907	journal	March 2012
Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing Jensen, J. R.; Hvam, J. M.; Langbein, W. Journal of Applied Physics, Vol. 86, Issue 5 https://doi.org/10.1063/1.371096	journal	September 1999
InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices Toledo, Nikholas G.; Mishra, Umesh K. Journal of Applied Physics, Vol. 111, Issue 11 https://doi.org/10.1063/1.4723831	journal	June 2012
A two‐junction cascade solar‐cell structure Bedair, S. M.; Lamorte, M. F.; Hauser, J. R. Applied Physics Letters, Vol. 34, Issue 1 https://doi.org/10.1063/1.90576	journal	January 1979
New formalism of the Kronig-Penney model with application to superlattices Cho, Hung-Sik; Prucnal, Paul R. Physical Review B, Vol. 36, Issue 6 https://doi.org/10.1103/physrevb.36.3237	journal	August 1987
High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers Tansu, N.; Mawst, L. J. IEEE Photonics Technology Letters, Vol. 13, Issue 3 https://doi.org/10.1109/68.914313	journal	January 2001
Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells Lee, Kan-Hua; Barnham, Keith W. J.; Connolly, James P. IEEE Journal of Photovoltaics, Vol. 2, Issue 1 https://doi.org/10.1109/jphotov.2011.2177444	journal	January 2012
Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells Bradshaw, Geoffrey K.; Carlin, C. Zachary; Samberg, Joshua P. IEEE Journal of Photovoltaics, Vol. 3, Issue 1 https://doi.org/10.1109/jphotov.2012.2216858	journal	January 2013
Design flexibility of ultra-high efficiency 4-junction inverted metamorphic solar cells France, Ryan M.; Geisz, John F.; Garcia, Ivan 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC), 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/pvsc.2015.7356439	conference	June 2015
Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices Capasso, F. Science, Vol. 235, Issue 4785 https://doi.org/10.1126/science.235.4785.172	journal	January 1987
Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation Onabe, Kentaro Japanese Journal of Applied Physics, Vol. 21, Issue Part 1, No. 5 https://doi.org/10.1143/jjap.21.797	journal	May 1982
Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region Kato, Takamasa; Matsumoto, Takashi; Kobatake, Takaaki Japanese Journal of Applied Physics, Vol. 26, Issue Part 2, No. 7 https://doi.org/10.1143/jjap.26.l1161	journal	July 1987
Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko Japanese Journal of Applied Physics, Vol. 50, Issue 1R https://doi.org/10.7567/jjap.50.011201	journal	January 2011
Defects in epitaxial multilayers: I. Misfit dislocations Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 27, p. 118-125 https://doi.org/10.1016/s0022-0248(74)80055-2	journal	December 1974
Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko Japanese Journal of Applied Physics, Vol. 50 https://doi.org/10.1143/jjap.50.011201	journal	January 2011
Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 29, Issue 3, p. 273-280 https://doi.org/10.1016/0022-0248(75)90171-2	journal	July 1975
Physics of Semiconductor Devices Sze, S. M.; Mattis, Daniel C. Physics Today, Vol. 23, Issue 6 https://doi.org/10.1063/1.3022205	journal	June 1970
Physics of Semiconductor Devices Rudan, Massimo Zenodo https://doi.org/10.5281/zenodo.4455003	book	January 2015
Physics of Semiconductor Devices Sze, S. M.; Ng, Kwok K. https://doi.org/10.1002/0470068329	book	January 2007

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTROSCOPY
BALANCES
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
LAYERS
OPTICAL MICROSCOPY
PHOTOLUMINESCENCE
PHOTOVOLTAIC EFFECT
QUANTUM EFFICIENCY
QUANTUM WELLS
SOLAR CELLS
SPECTRAL RESPONSE
THICKNESS
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY

Title: InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

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