Al00.3Ga0.7N PN diode with breakdown voltage >1600 V
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Lehigh Univ., Bethlehem, PA (United States)
Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1285958
- Report Number(s):
- SAND2016-7284J; 646208
- Journal Information:
- Electronics Letters, Vol. 52, Issue 15; ISSN 0013-5194
- Publisher:
- Institution of Engineering and Technology (IET)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
BaTiO 3 /Al 0.58 Ga 0.42 N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
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journal | January 2020 |
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