Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Nomoto, Kazuki; Li, Wenshen; Song, Bo; Hu, Zongyang; Zhu, Mingda; Qi, Meng; Protasenko, Vladimir; Zhang, Zexuan; Pan, Ming; Gao, Xiang; Marchand, Hugues; Johnson, Wayne; Jena, Debdeep; Xing, Huili Grace

doi:10.1063/5.0083302

Title: Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Journal Article · Thu Mar 24 00:00:00 EDT 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0083302· OSTI ID:1856534

Nomoto, Kazuki;

; Song, Bo;

; Zhu, Mingda;

; Protasenko, Vladimir;

; Pan, Ming; Gao, Xiang;

; Johnson, Wayne;

;

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000454

OSTI ID:: 1856534

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 120 Journal Issue: 12; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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