Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai; Liu, Hanxiao; Zhao, Yuji; McCartney, Martha R.; Ponce, Fernando A.

doi:10.1063/1.5127014

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Journal Article · Sun Nov 10 23:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5127014· OSTI ID:1573873

; ; ; ; Zhao, Yuji; McCartney, Martha R.;

The electrostatic potential variation across etched-and-regrown GaN p-i-n diodes for power electronics has been studied using electron holography in a transmission electron microscope. The potential profiles have been correlated with the composition profiles of Mg, Si, and O obtained by secondary ion mass spectroscopy. Electronic charges obtained from the potential profiles correlate well with the presence of Si and O impurities at regrown interfaces. The overlap of Mg and Si when Mg doped GaN is grown directly over an etched undoped GaN surface results in the formation of a highly doped p-n junction. The introduction of a thin undoped layer over the etched GaN surface prevents the formation of such a junction as the regrowth interface is moved away from the Mg-doped GaN, and results in diodes with improved reverse leakage currents, close to the best values of continuously grown p-i-n diodes. Potential profiles of continuously grown (not etched) p-i-n diodes are compared to those of etched-and-regrown diodes.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1573873

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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