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Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5052479· OSTI ID:1484237
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [2]
  1. Arizona State Univ., Tempe, AZ (United States); Arizona State University
  2. Arizona State Univ., Tempe, AZ (United States)
+ Show Author Affiliations

Here, to mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n diodes were fabricated to investigate the effects of the etch-then-regrowth process on device performance. The crystal quality of the sample after each epitaxial step was characterized by X-ray diffraction, where the etch-then-regrowth process led to a very slight increase in edge dislocations. A regrowth interfacial layer was clearly shown by transmission electron microscopy. Strong electroluminescence was observed with three emission peaks at 2.2 eV, 2.8 eV and 3.0 eV, respectively. The forward current density increased slightly with the increasing temperature, while the reverse current density was almost temperature independent indicating tunneling as the reverse transport mechanism. This result is very similar to the reported Zener tunnel diode comprising a high doping profile at the junction interface. High levels of silicon and oxygen concentrations were observed at the regrowth interface with a distribution width of ~100 nm. This work provides valuable information of p-GaN regrowth and regrown GaN p-n diodes, which can serve as an important reference for developing selective doping for advanced GaN power electronics for high voltage and high power applications.

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0000868
OSTI ID:
1484237
Alternate ID(s):
OSTI ID: 1505568
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 113; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (5)

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes journal December 2019
Dopant profiling in p-i-n GaN structures using secondary electrons journal July 2019
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes journal November 2019
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN journal February 2020
Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device journal March 2019

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