Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications
Conference
·
OSTI ID:1239777
Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
- DOE Contract Number:
- SC00112704
- OSTI ID:
- 1239777
- Report Number(s):
- BNL-108503-2015-CP; R&D Project: 20062; NN2001
- Resource Relation:
- Conference: The U.S. Workshop on the Physics and Chemistry of II-VI Materials; Chicago, IL; 20151005 through 20151008
- Country of Publication:
- United States
- Language:
- English
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