Low-temperature photoluminescence of detector grade Cd{sub 1{minus}{ital x}}Zn{sub {ital x}}Te crystal treated by different chemical etchants
- Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, Tennessee 37208 (United States)
- Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, California 94550 (United States)
- NASA/Goddard Space Flight Center/OSC, Greenbelt, Maryland 20771 (United States)
- NASA/Goddard Space Flight Center/NRC, Greenbelt, Maryland 20771 (United States)
Low-temperature photoluminescence (PL) spectra of detector grade Cd{sub 1{minus}{ital x}}Zn{sub {ital x}}Te ({ital x}=0.1) have been measured to obtain information about shallow level defect concentration introduced during mechanical polishing and chemical etching processes. We present here a comparative PL study of Cd{sub 0.9}Zn{sub 0.1}Te crystals treated by different chemical solutions used for nuclear detector surface treatment. The results show that the 5{percent} Br{endash}MeOH+2{percent}Br{endash}20{percent} lactic acid in ethylene glycol treatment combines the advantages of bromine and lactic acid for chemical etching and results in the best surface condition, as evidenced by the largest {ital I}({ital D}{sup 0},{ital X})/{ital I}{sub def} intensity ratio and the narrowest full width at half-maximum of the main peak ({ital D}{sup 0},{ital X}). Changes in the surface morphology were also analyzed by atomic force microscopy and correlated with the PL results. Current{endash}voltage ({ital I}{endash}{ital V}) curves and the room-temperature {sup 55}Fe spectral response of the sample etched by the best treatment are also presented and discussed. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 286911
- Journal Information:
- Journal of Applied Physics, Vol. 80, Issue 6; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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