Insight into the epitaxial growth of high optical quality GaAs1–xBix
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
The ternary alloy GaAs1–xBix is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs1–xBix epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., InyGa1–yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. Here, the improved optical quality now opens up possibilities for the practical use of GaAs1–xBix in optoelectronic devices.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1236040
- Alternate ID(s):
- OSTI ID: 1420689
- Report Number(s):
- NREL/JA-5K00-64989
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 23; Related Information: Journal of Applied Physics; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors
|
journal | May 2018 |
Optical properties of GaAs 1−x Bi x /GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates
|
journal | November 2018 |
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
|
journal | May 2020 |
Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
|
journal | February 2017 |
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Related Subjects
36 MATERIALS SCIENCE
bismuth
III-V semiconductors
surfactants
photoluminescence
desorption
solar cells
surface and interface chemistry
optoelectronic devices
ultraviolet light
optoelectronic applications
X-ray diffraction
electron diffraction
epitaxy
multiphase flows
photoluminescence spectroscopy