Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs

Journal Article · Sun Jul 15 04:00:00 EDT 2012 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2012.04.028· OSTI ID:1046877

Beaton, Daniel A.; Ptak, Aaron J.; Alberi, Kristin; Mascarenhas, Angelo

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1046877
• Report Number(s): NREL/JA-5900-54048
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1 Vol. 351; ISSN 0022-0248; ISSN JCRGAE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALLOYS
ATOMS
BISMUTH
BISMUTH COMPOUNDS
BORON
EXCITONS
MOLECULAR BEAM EPITAXY
SOLID SOLUTIONS
STRAINS
X-RAY DIFFRACTION
bismuth compounds
molecular beam epitaxy
solid solutions
x-ray diffraction