BGaInAs alloys lattice matched to GaAs

Journal Article · Mon Mar 13 04:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126058· OSTI ID:20215580

Geisz, J F ^[1]; Friedman, D J ^[1]; Olson, J M ^[1]; Kurtz, Sarah R ^[1]; Reedy, R C ^[1]; Swartzlander, A B ^[1]; Keyes, B M ^[1]; Norman, A G ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We report the epitaxial growth of zinc-blende B{sub x}Ga{sub 1-x-y}In{sub y}As and B{sub x}Ga{sub 1-x}As on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of B{sub x}Ga{sub 1-x}As increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial B{sub x}Ga{sub 1-x-y}In{sub y}As layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga{sub 1-y}In{sub y}As layer with the same band gap. (c) 2000 American Institute of Physics.

• OSTI ID: 20215580
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON ARSENIDES
CHEMICAL VAPOR DEPOSITION
ENERGY GAP
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
STRAINS