Ge-related faceting and segregation during the growth of metastable (GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers by metal{endash}organic vapor-phase epitaxy

Journal Article · Mon Mar 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123557· OSTI ID:321448

Norman, A G; Olson, J M; Geisz, J F; Moutinho, H R; Mason, A; Al-Jassim, M M ^[1]; Vernon, S M ^[2]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
2. Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730 (United States)

(GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers, 0{lt}x{lt}0.22, have been grown by metal{endash}organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x=0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {l_brace}115{r_brace}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {l_brace}115{r_brace}B surface faceting associated with the phase separation. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 321448
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 74; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CRYSTALS
ENERGY GAP
GALLIUM ARSENIDES
GERMANIUM ALLOYS
GERMANIUM COMPOUNDS
METASTABLE STATES
MICROSTRUCTURE
PHASE STUDIES
SEGREGATION
SOLAR CELLS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY