Lattice matched GaAs/Sc{sub 0.3}Er{sub 0.7}As/GaAs heterostructures grown on various substrate orientations
- Oak Ridge National Laboratory, Solid State Division, P.O. Box 2008, Oak Ridge, Tennessee 37831-6057 (United States)
- Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (United States)
- Department of Chemical Engineering and Materials Science, Amundson Hall, 421 Washington Avenue, SE, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
Lattice-matched heterostructures of GaAs/Sc{sub 0.3}Er{sub 0.7}As/GaAs have been grown on GaAs substrates with various orientations by molecular beam epitaxy and characterized by transmission electron microscopy. The Sc{sub 0.3}Er{sub 0.7}As layer usually has good epitaxy on GaAs; the purpose of this study is to investigate the overgrowth of GaAs on Sc{sub 0.3}Er{sub 0.7}As. In comparison with the samples grown on nominal (100) substrates, the epitactic growth of GaAs on Sc{sub 0.3}Er{sub 0.7}As is slightly improved on a vicinal substrate oriented (100) 6{degree} off towards (111){ital A}. {l_brace}311{r_brace} and {l_brace}211{r_brace} are shown to be preferred orientations for the epitactic growth of GaAs/Sc{sub 0.3}Er{sub 0.7}As/GaAs heterostructures. The epilayers grown on {l_brace}311{r_brace} and {l_brace}211{r_brace} substrates are epitactically well aligned, and the density of planar defects (stacking faults and microtwins) in the overgrown GaAs layer is significantly reduced. It is suggested that the mixed {l_brace}111{r_brace} and {l_brace}100{r_brace} character surfaces assist the nucleation of GaAs on Sc{sub 0.3}Er{sub 0.7}As. Stacking faults and microtwins are the major defects for the epilayers grown on (110) substrates. For samples grown on (111){ital B}-oriented substrates, twinning at the interfaces occurs frequently even when selftwinning inside each material is eliminated.
- OSTI ID:
- 29261
- Journal Information:
- Journal of Applied Physics, Vol. 77, Issue 9; Other Information: PBD: 1 May 1995
- Country of Publication:
- United States
- Language:
- English
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