Microstructure of epitactically grown GaAs/ErAs/GaAs
- Department of Materials Science, Cornell University, Ithaca, New York (USA) Engineering, Bard Hall, Cornell University, Ithaca, New York 14853 (USA)
- Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (USA)
A series of GaAs/ErAs/GaAs epilayer heterostructures has been grown on (100)GaAs substrates by molecular beam epitaxy and characterized by high-resolution transmission electron microscopy and Rutherford backscattering measurements. Good epitaxy of the ErAs on the GaAs is demonstrated. The top GaAs layer is usually epitactically aligned with ErAs/GaAs in most areas; however, growth of (111)GaAs on (100)ErAs has also been observed. Small grains are present in the top GaAs layer which are twinned on {l brace}111{r brace} with respect to epitactic grains. These give rise to GaAs {l brace}122{r brace}/ErAs(100) phase boundaries. The {l brace}122{r brace} oriented GaAs grains do not continue throughout the GaAs growth but are overgrown by the neighboring epitactic grains.
- OSTI ID:
- 6905807
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:14; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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