Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

Journal Article · Wed Dec 04 04:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848265· OSTI ID:22261791

Usman, Muhammad ^[1]; Broderick, Christopher A.; O'Reilly, Eoin P. ^[2]

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1. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland)
2. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland and Department of Physics, University College Cork, Cork (Ireland)

The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBi{sub x}As{sub 1−x} alloys results in a large reduction of the band gap energy (E{sub g}) accompanied by a significant increase of the spin-orbit-splitting energy (Δ{sub SO}), leading to an E{sub g} < Δ{sub SO} regime for x ∼ 10% which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBi{sub x}N{sub y}As{sub 1−x−y} offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp{sup 3}s* tight binding and 14-band k⋅p models for the study of the electronic structure of GaBi{sub x}As{sub 1−x} and GaBi{sub x}N{sub y}As{sub 1−x−y} alloys. Our results are in good agreement with the available experimental data.

• OSTI ID: 22261791
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1566; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ALLOYS
BISMUTH
ELECTRONIC STRUCTURE
FLEXIBILITY
GALLIUM ARSENIDES
QUATERNARY ALLOY SYSTEMS