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Title: Optical characterization of GaAs/sub 1-x/Sb/sub x/ and GaAs/sub 1-x/Sb/sub x//GaAs strained layer superlattices

Conference ·
OSTI ID:5678018

Molecular beam epitaxy has been used to grow both GaAs/sub 0.5/Sb/sub 0.5/ films lattice-matched to InP and GaAs/sub 1-x/Sb/sub x//GaAs strained layer superlattices on GaAs substrates. Films grown on InP substrates are of a composition inside the well-known solid-phase miscibility gap for this alloy. Because these films are metastable, they exhibit an unusual microstructure which includes both ordering and clustering effects. Nevertheless, we have obtained low-temperature photoluminescence linewidths of under 8 MeV. This represents the best linewidth for this material reported to data. Correlations between film microstructure and the optical quality of these alloys have been observed.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA); Illinois Univ., Urbana (USA). Coordinated Science Lab.; Purdue Univ., Lafayette, IN (USA). School of Materials Engineering
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5678018
Report Number(s):
SAND-87-2589C; CONF-880110-2; ON: DE88003393
Resource Relation:
Conference: SPIE O-E Lase '88: optoelectronics and laser applications in science and engineering, Los Angeles, CA, USA, 10 Jan 1988; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English