Optical characterization of GaAs/sub 1-x/Sb/sub x/ and GaAs/sub 1-x/Sb/sub x//GaAs strained layer superlattices
Conference
·
OSTI ID:5678018
Molecular beam epitaxy has been used to grow both GaAs/sub 0.5/Sb/sub 0.5/ films lattice-matched to InP and GaAs/sub 1-x/Sb/sub x//GaAs strained layer superlattices on GaAs substrates. Films grown on InP substrates are of a composition inside the well-known solid-phase miscibility gap for this alloy. Because these films are metastable, they exhibit an unusual microstructure which includes both ordering and clustering effects. Nevertheless, we have obtained low-temperature photoluminescence linewidths of under 8 MeV. This represents the best linewidth for this material reported to data. Correlations between film microstructure and the optical quality of these alloys have been observed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Illinois Univ., Urbana (USA). Coordinated Science Lab.; Purdue Univ., Lafayette, IN (USA). School of Materials Engineering
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5678018
- Report Number(s):
- SAND-87-2589C; CONF-880110-2; ON: DE88003393
- Resource Relation:
- Conference: SPIE O-E Lase '88: optoelectronics and laser applications in science and engineering, Los Angeles, CA, USA, 10 Jan 1988; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ANTIMONY ALLOYS
LINE WIDTHS
MICROSTRUCTURE
OPTICAL PROPERTIES
GALLIUM ALLOYS
GALLIUM ARSENIDES
CRYSTAL LATTICES
FILMS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SUBSTRATES
SUPERLATTICES
VALENCE
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies
ANTIMONY ALLOYS
LINE WIDTHS
MICROSTRUCTURE
OPTICAL PROPERTIES
GALLIUM ALLOYS
GALLIUM ARSENIDES
CRYSTAL LATTICES
FILMS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SUBSTRATES
SUPERLATTICES
VALENCE
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies