Optical characterization of GaAs/sub 1-x/Sb/sub x/ and GaAs/sub 1-x/Sb/sub x//GaAs strained layer superlattices

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:5678018

Klem, J F; Huang, D; Morkoc, H; Ihm, Y E; Otsuka, N

Molecular beam epitaxy has been used to grow both GaAs/sub 0.5/Sb/sub 0.5/ films lattice-matched to InP and GaAs/sub 1-x/Sb/sub x//GaAs strained layer superlattices on GaAs substrates. Films grown on InP substrates are of a composition inside the well-known solid-phase miscibility gap for this alloy. Because these films are metastable, they exhibit an unusual microstructure which includes both ordering and clustering effects. Nevertheless, we have obtained low-temperature photoluminescence linewidths of under 8 MeV. This represents the best linewidth for this material reported to data. Correlations between film microstructure and the optical quality of these alloys have been observed.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Illinois Univ., Urbana (USA). Coordinated Science Lab.; Purdue Univ., Lafayette, IN (USA). School of Materials Engineering
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5678018
• Report Number(s): SAND-87-2589C; CONF-880110-2; ON: DE88003393
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
EPITAXY
FILMS
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
LAYERS
LINE WIDTHS
LUMINESCENCE
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SUBSTRATES
SUPERLATTICES
VALENCE