Raman and photoluminescence spectra of GaAs/sub 1-x/Sb/sub x/

Journal Article · Wed May 15 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335299· OSTI ID:5813721

Cohen, R M; Cherng, M J; Benner, R E; Stringfellow, G B

The first experimental Raman and photoluminescence spectra are presented for the metastable alloy GaAs/sub 1-x/Sb/sub x/ grown by organometallic vapor phase epitaxy throughout its miscibility gap extending from x = 0.2 to x = 0.75. The phonon peak halfwidths are found to broaden by nearly a factor of 2 over halfwidths found in the binary compounds GaAs and GaSb. Phonon line shapes become more asymmetric in the miscibility gap as the selection rules break down; in addition, a second peak appears for samples grown near the center of the miscibility gap. Line shapes are analyzed and the phonon coherence length is found to be reduced from several hundred angstroms in GaAs to approximately 60 A in samples grown in the miscibility gap. The compositional dependence of the room-temperature band-gap energy has been found to closely follow earlier predictions.

• Research Organization: University of Utah, Salt Lake City, Utah 84112
• DOE Contract Number: AT03-81ER10934
• OSTI ID: 5813721
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
ENERGY GAP
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LINE WIDTHS
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
RAMAN SPECTRA
SPECTRA
VAPOR PHASE EPITAXY