Optical properties of molecular beam epitaxially grown GaAs/sub 1/. sqrt. /sub x/Sb/sub x/ (0<0. 5) on GaAs and InP substrates

Journal Article · Wed Jun 15 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340274· OSTI ID:5253076

Huang, D; Chyi, J; Klem, J; Morkoc, H

Undoped and lightly Si doped GaAs/sub 1/..sqrt../sub x/Sb/sub x/ bulk layers have been grown on GaAs substrates with Sb composition as high as 0.5 by molecular beam epitaxy. Low temperature (4 K) photoluminescence (PL) and absorption measurements were carried out. For samples with x values smaller than 0.06, PL spectra were dominated by two bands, the emission associated with the bound excitons and with the electron (or donor) to acceptor recombinations. However, the free exciton peak was clearly observable in absorption spectra. For higher Sb compositions (x>0.06), only one peak associated with the impurity or defect related transitions dominates PL spectra. We found that the energy and the line shape of this main peak are closely related to the sample quality for the same x value. The lower peak energy than the band gap, the low signal intensity and the large line broadening are due to the emissions associated with the defect band below the ideal (perfect crystal) energy gap introduced by the lattice mismatch near the heterointerface of GaAs/sub 1/..sqrt../sub x/Sb/sub x/ and GaAs. As expected, higher quality epilayers provide a stronger PL intensity, smaller line width, as well as a higher peak energy

• Research Organization: Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 W. Springfield Avenue, Urbana, Illinois 61801
• OSTI ID: 5253076
• Journal Information: J. Appl. Phys.; (United States), Vol. 63:12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY COMPOUNDS
CRYSTAL GROWTH METHODS
PHYSICAL RADIATION EFFECTS
ARSENIC COMPOUNDS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
SURFACE COATING
INDIUM PHOSPHIDES
ABSORPTION SPECTRA
EXPERIMENTAL DATA
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SUBSTRATES
ARSENIDES
DATA
DEPOSITION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LUMINESCENCE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
SPECTRA
360605* - Materials- Radiation Effects