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Study of molecular-beam epitaxy GaAs/sub 1-//sub x/Sb/sub x/ (x<0. 76) grown on GaAs(100)

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584417· OSTI ID:5311195

Lattice mismatched 0.5 to 1-..mu..m-thick GaAs/sub 1-//sub x/Sb/sub x/ epilayers were grown on (100) n-type GaAs by molecular-beam epitaxy (MBE) throughout the whole composition range and characterized for Sb content up to 0.76. The Sb incorporation coefficient is found to be 0.42 at a substrate temperature of 480 /sup 0/C. The epilayer quality was examined by x-ray diffraction, photoluminescence, and photoresponse. The relationship between energy band gap of GaAs/sub 1-//sub x/Sb/sub x/ and Sb content at room temperature is found to be in good agreement with the result of Nahory et al. and that at 77 K is established and can be reasonably described by the estimated one from the binary band gaps of GaAs and GaSb at 77 K and the ternary band gaps of GaAs/sub 1-//sub x/Sb/sub x/ at 300 K. Both majority electron and hole traps in GaAs/sub 1-//sub x/Sb/sub x/ epilayers were characterized.

Research Organization:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
OSTI ID:
5311195
Journal Information:
J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:2; ISSN JVTBD
Country of Publication:
United States
Language:
English