Study of molecular-beam epitaxy GaAs/sub 1-//sub x/Sb/sub x/ (x<0. 76) grown on GaAs(100)
Lattice mismatched 0.5 to 1-..mu..m-thick GaAs/sub 1-//sub x/Sb/sub x/ epilayers were grown on (100) n-type GaAs by molecular-beam epitaxy (MBE) throughout the whole composition range and characterized for Sb content up to 0.76. The Sb incorporation coefficient is found to be 0.42 at a substrate temperature of 480 /sup 0/C. The epilayer quality was examined by x-ray diffraction, photoluminescence, and photoresponse. The relationship between energy band gap of GaAs/sub 1-//sub x/Sb/sub x/ and Sb content at room temperature is found to be in good agreement with the result of Nahory et al. and that at 77 K is established and can be reasonably described by the estimated one from the binary band gaps of GaAs and GaSb at 77 K and the ternary band gaps of GaAs/sub 1-//sub x/Sb/sub x/ at 300 K. Both majority electron and hole traps in GaAs/sub 1-//sub x/Sb/sub x/ epilayers were characterized.
- Research Organization:
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
- OSTI ID:
- 5311195
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 6:2; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360604 -- Materials-- Corrosion
Erosion
& Degradation
ALLOYS
ANTIMONY COMPOUNDS
ARSENIC ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
COATINGS
COHERENT SCATTERING
DATA
DIFFRACTION
ENERGY GAP
EPITAXY
EXPERIMENTAL DATA
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
SCATTERING
TRAPS
X-RAY DIFFRACTION