Band lineup in GaAs/sub 1-//sub x/Sb/sub x//GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

Journal Article · Tue Nov 15 04:00:00 EST 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.38.10571· OSTI ID:6749053

Ji, G; Agarwala, S; Huang, D; Chyi, J; Morkoc, H

GaAs/sub 1-//sub x/Sb/sub x//GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs/sub 1-//sub x/Sb/sub x//GaAs system. The method for determining the band offset Q/sub v//sub h/ is discussed in this strained-layer system. Based on this treatment and the band-gap formula of bulk GaAs/sub 1-//sub x/Sb/sub x/ a value of the heavy-hole band offset (Q/sub v//sub h/approx.1.7) has been obtained for GaAs/sub 1-//sub x/Sb/sub x//GaAs with x = 0.1 establishing a type-II structure with electrons in GaAs layers and heavy and light holes in GaAs/sub 1-//sub x/Sb/sub x/ layers, respectively.

• Research Organization: Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois 61801
• OSTI ID: 6749053
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:15; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
STRAINS
SURFACE PROPERTIES