The effect of Bi composition to the optical quality of GaAs{sub 1-x}Bi{sub x}

Journal Article · Mon Jul 25 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3617461· OSTI ID:22027692

Mohmad, A R ^[1]; Bastiman, F; Hunter, C J; Ng, J S; David, J P. R. ^[1]; Sweeney, S J ^[2]

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1. Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom)
2. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

GaAs{sub 1-x}Bi{sub x} alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, Bi{sub Ga}. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs{sub 1-x}Bi{sub x}. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.

• OSTI ID: 22027692
• Journal Information: Applied Physics Letters, Vol. 99, Issue 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ARSENIC
BISMUTH
CONCENTRATION RATIO
CORRELATIONS
CRYSTAL GROWTH
CRYSTALS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM
GALLIUM ARSENIDES
INTERMETALLIC COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE