Insight into the epitaxial growth of high optical quality GaAs1–xBix

Beaton, Daniel A.; Mascarenhas, Angelo; Alberi, Kirstin

doi:10.1063/1.4937574

Insight into the epitaxial growth of high optical quality GaAs_1–xBi_x

Journal Article · Wed Dec 16 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4937574· OSTI ID:1236040

Beaton, Daniel A. ^[1]; Mascarenhas, Angelo ^[1]; Alberi, Kirstin ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

The ternary alloy GaAs_1–xBi_x is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs_1–xBi_x epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., In_yGa_1–yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. Here, the improved optical quality now opens up possibilities for the practical use of GaAs_1–xBi_x in optoelectronic devices.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1236040

Alternate ID(s):: OSTI ID: 1420689
OSTI ID: 22493077

Report Number(s):: NREL/JA--5K00-64989

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 118; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Optical properties of GaAs _1−x Bi _x /GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates Gunes, M.; Ukelge, M. O.; Donmez, O. Semiconductor Science and Technology, Vol. 33, Issue 12 https://doi.org/10.1088/1361-6641/aaea2e	journal	November 2018
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys Paulauskas, Tadas; Pačebutas, Vaidas; Butkutė, Renata Nanoscale Research Letters, Vol. 15, Issue 1 https://doi.org/10.1186/s11671-020-03349-2	journal	May 2020
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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
III-V semiconductors
X-ray diffraction
bismuth
desorption
electron diffraction
epitaxy
multiphase flows
optoelectronic applications
optoelectronic devices
photoluminescence
photoluminescence spectroscopy
solar cells
surface and interface chemistry
surfactants
ultraviolet light