Insight into the epitaxial growth of high optical quality GaAs1–xBix

Beaton, Daniel A.; Mascarenhas, Angelo; Alberi, Kirstin

doi:10.1063/1.4937574

Title: Insight into the epitaxial growth of high optical quality GaAs_1–xBi_x

Journal Article · Wed Dec 16 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4937574· OSTI ID:1236040

Beaton, Daniel A. ^[1]; Mascarenhas, Angelo ^[1]; Alberi, Kirstin ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

The ternary alloy GaAs_1–xBi_x is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs_1–xBi_x epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., In_yGa_1–yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. Here, the improved optical quality now opens up possibilities for the practical use of GaAs_1–xBi_x in optoelectronic devices.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1236040

Alternate ID(s):: OSTI ID: 1420689

Report Number(s):: NREL/JA-5K00-64989

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 23; Related Information: Journal of Applied Physics; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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References (33)

Molecular beam epitaxy growth of GaAs1−xBix Tixier, S.; Adamcyk, M.; Tiedje, T. Applied Physics Letters, Vol. 82, Issue 14 https://doi.org/10.1063/1.1565499	journal	April 2003
Growth and properties of the dilute bismide semiconductor GaAs<SUB align=right>1−xBi<SUB align=right>x a complementary alloy to the dilute nitrides Tiedje, T.; Young, E. C.; Mascarenhas, A. International Journal of Nanotechnology, Vol. 5, Issue 9/10/11/12 https://doi.org/10.1504/IJNT.2008.019828	journal	January 2008
Giant Spin-Orbit Bowing in ${GaAs}_{1 - x} {Bi}_{x}$ Fluegel, B.; Francoeur, S.; Mascarenhas, A. Physical Review Letters, Vol. 97, Issue 6 https://doi.org/10.1103/PhysRevLett.97.067205	journal	August 2006
Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs Dimroth, F.; Howard, A.; Shurtleff, J. K. Journal of Applied Physics, Vol. 91, Issue 6 https://doi.org/10.1063/1.1450053	journal	March 2002
Structural investigation of GaAs1−xBix/GaAs multiquantum wells Tominaga, Yoriko; Kinoshita, Yusuke; Oe, Kunishige Applied Physics Letters, Vol. 93, Issue 13 https://doi.org/10.1063/1.2993343	journal	September 2008
light emitting diodes Lewis, R. B.; Beaton, D. A.; Lu, Xianfeng. Journal of Crystal Growth, Vol. 311, Issue 7 https://doi.org/10.1016/j.jcrysgro.2008.11.093	journal	March 2009
Heterojunction bipolar transistors implemented with GaInNAs materials Asbeck, P. M.; Welty, R. J.; Tu, C. W. Semiconductor Science and Technology, Vol. 17, Issue 8 https://doi.org/10.1088/0268-1242/17/8/319	journal	July 2002
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth Bastiman, F.; Mohmad, A. R. B.; Ng, J. S. Journal of Crystal Growth, Vol. 338, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.07.036	journal	January 2012
The effect of Bi composition to the optical quality of GaAs _1−x Bi _x Mohmad, A. R.; Bastiman, F.; Hunter, C. J. Applied Physics Letters, Vol. 99, Issue 4 https://doi.org/10.1063/1.3617461	journal	July 2011
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix Pettinari, G.; Polimeni, A.; Capizzi, M. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2953176	journal	June 2008
New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy Oe, Kunishige; Okamoto, Hiroshi Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 11A https://doi.org/10.1143/JJAP.37.L1283	journal	November 1998
Characteristics of Semiconductor Alloy GaAs _{1- x} Bi _x Oe, Kunishige Japanese Journal of Applied Physics, Vol. 41, Issue Part 1, No. 5A https://doi.org/10.1143/JJAP.41.2801	journal	May 2002
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix Lu, X.; Beaton, D. A.; Lewis, R. B. Applied Physics Letters, Vol. 92, Issue 19 https://doi.org/10.1063/1.2918844	journal	May 2008
Kinetically limited growth of GaAsBi by molecular-beam epitaxy Ptak, A. J.; France, R.; Beaton, D. A. Journal of Crystal Growth, Vol. 338, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.10.040	journal	January 2012
Growth of high Bi concentration GaAs _1−x Bi _x by molecular beam epitaxy Lewis, R. B.; Masnadi-Shirazi, M.; Tiedje, T. Applied Physics Letters, Vol. 101, Issue 8 https://doi.org/10.1063/1.4748172	journal	August 2012
Bismuth surfactant growth of the dilute nitride GaNxAs1−x Young, E. C.; Tixier, S.; Tiedje, T. Journal of Crystal Growth, Vol. 279, Issue 3-4 https://doi.org/10.1016/j.jcrysgro.2005.02.045	journal	June 2005
Composition dependence of photoluminescence of GaAs1−xBix alloys Lu, Xianfeng; Beaton, D. A.; Lewis, R. B. Applied Physics Letters, Vol. 95, Issue 4 https://doi.org/10.1063/1.3191675	journal	July 2009
Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs Preobrazhenskii, V. V.; Putyato, M. A.; Pchelyakov, O. P. Journal of Crystal Growth, Vol. 201-202 https://doi.org/10.1016/S0022-0248(98)01308-6	journal	May 1999
Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy Masnadi-Shirazi, M.; Beaton, D. A.; Lewis, R. B. Journal of Crystal Growth, Vol. 338, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.09.055	journal	January 2012
Photoluminescence investigation of high quality GaAs1−xBix on GaAs Mohmad, A. R.; Bastiman, F.; Ng, J. S. Applied Physics Letters, Vol. 98, Issue 12 https://doi.org/10.1063/1.3565244	journal	March 2011
Clustering effects in Ga(AsBi) Imhof, Sebastian; Thränhardt, Angela; Chernikov, Alexej Applied Physics Letters, Vol. 96, Issue 13 https://doi.org/10.1063/1.3374884	journal	March 2010
Nitrogen pair luminescence in GaAs Liu, Xiao; Pistol, M. ‐E.; Samuelson, L. Applied Physics Letters, Vol. 56, Issue 15 https://doi.org/10.1063/1.102495	journal	April 1990
Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped ${GaAs}_{1 - x} N_{x}$ Zhang, Yong; Mascarenhas, A.; Geisz, J. F. Physical Review B, Vol. 63, Issue 8 https://doi.org/10.1103/PhysRevB.63.085205	journal	February 2001
Spatial correlation between Bi atoms in dilute ${GaAs}_{1 - x} {Bi}_{x}$ : From random distribution to Bi pairing and clustering Ciatto, G.; Young, E. C.; Glas, F. Physical Review B, Vol. 78, Issue 3 https://doi.org/10.1103/PhysRevB.78.035325	journal	July 2008
Molecular beam epitaxy growth of GaAsBi using As2 and As4 Richards, Robert D.; Bastiman, Faebian; Hunter, Christopher J. Journal of Crystal Growth, Vol. 390 https://doi.org/10.1016/j.jcrysgro.2013.12.008	journal	March 2014
Effects of incident UV light on the surface morphology of MBE grown GaAs Beaton, Daniel A.; Sanders, C.; Alberi, K. Journal of Crystal Growth, Vol. 413 https://doi.org/10.1016/j.jcrysgro.2014.12.015	journal	March 2015
Fermi energy tuning with light to control doping profiles during epitaxy Sanders, C. E.; Beaton, D. A.; Reedy, R. C. Applied Physics Letters, Vol. 106, Issue 18 https://doi.org/10.1063/1.4921047	journal	May 2015
Quaternary bismide alloy lattice matched to GaAs Beaton, Daniel A.; Ptak, A. J.; Alberi, K. Journal of Crystal Growth, Vol. 351, Issue 1 https://doi.org/10.1016/j.jcrysgro.2012.04.028	journal	July 2012
GaAs _1−y Bi _y Raman signatures: illuminating relationships between the electrical and optical properties of GaAs _1−y Bi _y and Bi incorporation Li, Jincheng; Forghani, Kamran; Guan, Yingxin AIP Advances, Vol. 5, Issue 6 https://doi.org/10.1063/1.4922139	journal	June 2015
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides Mazzucato, S.; Potter, R. J.; Erol, A. Physica E: Low-dimensional Systems and Nanostructures, Vol. 17 https://doi.org/10.1016/S1386-9477(02)00783-X	journal	April 2003
Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy Johnson, S. R.; Sadofyev, Yu. G.; Ding, D. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 3 https://doi.org/10.1116/1.1705579	journal	January 2004
Observation of atomic ordering of triple-period-A and -B type in GaAsBi Wu, Mingjian; Luna, Esperanza; Puustinen, Janne Applied Physics Letters, Vol. 105, Issue 4 https://doi.org/10.1063/1.4891854	journal	July 2014
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures Mooney, P. M.; Watkins, K. P.; Jiang, Zenan Journal of Applied Physics, Vol. 113, Issue 13 https://doi.org/10.1063/1.4798237	journal	April 2013

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Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors Alberi, Kirstin; Scarpulla, Michael A. Journal of Applied Physics, Vol. 123, Issue 18 https://doi.org/10.1063/1.5010945	journal	May 2018
Optical properties of GaAs _1−x Bi _x /GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates Gunes, M.; Ukelge, M. O.; Donmez, O. Semiconductor Science and Technology, Vol. 33, Issue 12 https://doi.org/10.1088/1361-6641/aaea2e	journal	November 2018
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys Paulauskas, Tadas; Pačebutas, Vaidas; Butkutė, Renata Nanoscale Research Letters, Vol. 15, Issue 1 https://doi.org/10.1186/s11671-020-03349-2	journal	May 2020
Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application Wang, Lijuan; Zhang, Liyao; Yue, Li Crystals, Vol. 7, Issue 3 https://doi.org/10.3390/cryst7030063	journal	February 2017

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Title: Insight into the epitaxial growth of high optical quality GaAs1–xBix

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Title: Insight into the epitaxial growth of high optical quality GaAs_1–xBi_x