Organometallic vapor phase epitaxial growth of GaAs/sub 0. 5/Sb/sub 0. 5/

Journal Article · Sun Apr 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94874· OSTI ID:5138801

Cherng, M J; Stringfellow, G G; Cohen, R M

The pseudobinary III/V system GaAs/sub 1-y/Sb/sub y/ is well known to have a solid phase miscibility gap with a critical temperature of 751 /sup 0/C. We have succeeded in growing epitaxial layers of GaAs/sub 0.5/Sb/sub 0.5/ lattice matched to InP at temperatures of 600 and 630 /sup 0/C using the organometallic vapor phase epitaxy technique. The key requirement is a III/V ratio of greater than unity. This leads to the incorporation of all As and Sb reaching the interface and the ability to grow metastable alloys. The epitaxial GaAs/sub 0.5/Sb/sub 0.5/ layers have excellent surface morphology and efficient photoluminescence at a wavelength of 1.6 ..mu..m.

• Research Organization: Department of Materials Science, University of Utah, Salt Lake City, Utah 84112
• DOE Contract Number: AT03-81ER10934
• OSTI ID: 5138801
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
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36 MATERIALS SCIENCE
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360602 -- Other Materials-- Structure & Phase Studies
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CHEMICAL COMPOSITION
CRITICAL TEMPERATURE
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
HIGH TEMPERATURE
INFRARED RADIATION
LAYERS
LUMINESCENCE
MEASURING INSTRUMENTS
MORPHOLOGY
PHOTOELECTRIC CELLS
PHOTOLUMINESCENCE
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIATION DETECTORS
RADIATIONS
SOLAR CELLS
SOLAR EQUIPMENT
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
USES
VAPOR PHASE EPITAXY