Theoretical and experimental study of solid phase miscibility gaps in III/V quaternary alloys. Progress report. [GaAs/sub 0/ /sub 5/Sb/sub 0/ /sub 5/]
Technical Report
·
OSTI ID:5368931
GaAs/sub 0/ /sub 5/Sb/sub 0/ /sub 5/ alloys were grown at 600 and 630/sup 0/C in the middle of the solid immiscibility range, using the organometallic vapor phase epitaxial growth technique. The surface morphology is excellent, and the photoluminescence spectra are typical of the III/V alloy semiconductors. (DLC)
- Research Organization:
- Utah Univ., Salt Lake City (USA)
- DOE Contract Number:
- AT03-81ER10934
- OSTI ID:
- 5368931
- Report Number(s):
- DOE/ER/10934-T1; ON: DE84004391
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theoretical and experimental study of solid phase miscibility gaps in III/V quaternary alloys. Progress report
Organometallic vapor phase epitaxial growth of GaAs/sub 0. 5/Sb/sub 0. 5/
Raman and photoluminescence spectra of GaAs/sub 1-x/Sb/sub x/
Technical Report
·
Mon Oct 31 23:00:00 EST 1983
·
OSTI ID:6566355
Organometallic vapor phase epitaxial growth of GaAs/sub 0. 5/Sb/sub 0. 5/
Journal Article
·
Sat Mar 31 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5138801
Raman and photoluminescence spectra of GaAs/sub 1-x/Sb/sub x/
Journal Article
·
Wed May 15 00:00:00 EDT 1985
· J. Appl. Phys.; (United States)
·
OSTI ID:5813721