Theoretical and experimental study of solid phase miscibility gaps in III/V quaternary alloys. Progress report

Technical Report · Tue Nov 01 04:00:00 EST 1983

OSTI ID:6566355

Stringfellow, G B

The research proposed for the third year of the current project was to attempt to grow metastable alloys of GaAs/sub 1-x/Sb/sub x/ using the nonequilibrium organometallic vapor phase epitaxial growth technique and then study the properties of these metastable alloys including STEM studies and electrical and optical properties characterization. The OMVPE experiments were totally successful. We were indeed able to grow GaAs /sub 5/Sb/sub 5/ alloys at 600/sup 0/C and 630/sup 0/C right in the middle of the range of solid immiscibility. We were able to use the theoretical thermodynamic framework developed in the first two years of the project to accurately describe the processes occurring during OMVPE, particularly the dramatic effect of V/III ratio on solid composition. The properties appear initially to be quite promising. The surface morphology is excellent and the photoluminescence spectra are typical of III/V alloy semiconductors.

• Research Organization: Utah Univ., Salt Lake City (USA)
• DOE Contract Number: AT03-81ER10934
• OSTI ID: 6566355
• Report Number(s): DOE/ER/10934-T2; ON: DE84017357
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BINARY MIXTURES
CRYSTAL GROWTH
DEPOSITION
DISPERSIONS
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
MIXTURES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
RESEARCH PROGRAMS