Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

Journal Article · Mon Jan 01 00:00:00 EST 1990 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/16.43815· OSTI ID:6815308

Rubin, L; Herbots, N ^[1]; Hoffman, D ^[2]; Ma, D ^[3]

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1. Massachusetts Inst. of Tech., Cambridge, MA (USA). Center for Materials Science and Engineering
2. Cypress Semiconductor, San Jose, CA (US)
3. Standard Microsystems Corp., New York, NY (USA)

The authors have studied the performance of diodes fabricated on n-type and p-type Si substrates by implanting As or B through a low-resistivity titanium-silicide layer. The effects of varying the implant dose, energy, and post-implant thermal treatment were investigated. After implantation, a rapid thermal anneal was found to be sufficient in removing most of the implant damage and activating the dopants, which resulted in N{sup +} {minus} p and p{sup +} {minus} n junctions under a low-resistivity silicide layer. The n{sup +} {minus} p junctions were as shallow as 1000 {angstrom} with reverse leakage currents as low as 5.5 {mu}A/cm{sup 2}. A conventional furnace anneal resulted in a further reduction of this leakage. Shallow p{sub +} {minus} n junctions could not be formed with boron implantation because of the large projected range of boron ions at the lowest available energy. Ti silicide films thinner than 600 {angstrom} exhibited a sharp rise in sheet resistivity after a furnace anneal, whereas thicker films exhibited more stable behavior. This is attributed to coalescence of the films. High-temperature furnace annealing diffused some of the dopants into the silicide film, reducing the surface concentrations at the TiSi{sub 2}-Si interface.

• OSTI ID: 6815308
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA), Vol. 37; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
74 ATOMIC AND MOLECULAR PHYSICS
ARSENIC
ION IMPLANTATION
BORON
JUNCTION DIODES
PERFORMANCE
TITANIUM SILICIDES
THIN FILMS
ANNEALING
DIFFUSION
FABRICATION
HIGH TEMPERATURE
INTERFACES
LEAKAGE CURRENT
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SILICON
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
FILMS
HEAT TREATMENTS
MATERIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
640302 - Atomic
Molecular & Chemical Physics- Atomic & Molecular Properties & Theory