Titanium silicide formation on boron-implanted silicon
Thin film interaction between Ti and boron-implanted silicon substrates at 650/sup 0/-900/sup 0/ C was investigated. The compositional properties were examined with Rutherford backscattering spectrometry and secondary ion mass spectrometry, the structural properties with x-ray diffraction, and the electrical properties with sheet resistance measurements. At 650/sup 0/ C, incomplete Ti/Si reaction led to significant amounts of intermediate silicide phases (Ti/sub 5/Si/sub 3/ and TiSi) and hence higher sheet resistance. Annealing at 700/sup 0/ C or higher resulted in conversion of the titanium film into predominantly TiSi/sub 2/ and a lower sheet resistance. Boron was found to redistribute into the silicide layer during annealing, leading to an accumulation on the surface and a depletion at the silicide/silicon interface. The diffusion kinetics of boron through titanium silicide are compared with those of other p- and n-type dopants.
- Research Organization:
- General Electric Company, Corporate Research and Development, Schenectady, New York
- OSTI ID:
- 6216114
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:8; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
BORON
CHEMICAL ANALYSIS
CHEMICAL REACTION KINETICS
COHERENT SCATTERING
CRYSTAL DOPING
DIFFRACTION
DIFFUSION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
ION SPECTROSCOPY
KINETICS
MATERIALS
METALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHASE STUDIES
PHYSICAL PROPERTIES
QUANTITATIVE CHEMICAL ANALYSIS
REACTION KINETICS
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SHEETS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
STRUCTURAL CHEMICAL ANALYSIS
THERMAL DIFFUSION
THERMAL DIFFUSIVITY
THERMODYNAMIC PROPERTIES
THIN FILMS
TITANIUM
TITANIUM COMPOUNDS
TITANIUM SILICIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
VERY HIGH TEMPERATURE
X-RAY DIFFRACTION