Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

Journal Article · Mon Jan 01 04:00:00 EST 1990 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/16.43815· OSTI ID:6815308

Rubin, L; Herbots, N ^[1]; Hoffman, D ^[2]; Ma, D ^[3]

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1. Massachusetts Inst. of Tech., Cambridge, MA (USA). Center for Materials Science and Engineering
2. Cypress Semiconductor, San Jose, CA (US)
3. Standard Microsystems Corp., New York, NY (USA)

The authors have studied the performance of diodes fabricated on n-type and p-type Si substrates by implanting As or B through a low-resistivity titanium-silicide layer. The effects of varying the implant dose, energy, and post-implant thermal treatment were investigated. After implantation, a rapid thermal anneal was found to be sufficient in removing most of the implant damage and activating the dopants, which resulted in N{sup +} {minus} p and p{sup +} {minus} n junctions under a low-resistivity silicide layer. The n{sup +} {minus} p junctions were as shallow as 1000 {angstrom} with reverse leakage currents as low as 5.5 {mu}A/cm{sup 2}. A conventional furnace anneal resulted in a further reduction of this leakage. Shallow p{sub +} {minus} n junctions could not be formed with boron implantation because of the large projected range of boron ions at the lowest available energy. Ti silicide films thinner than 600 {angstrom} exhibited a sharp rise in sheet resistivity after a furnace anneal, whereas thicker films exhibited more stable behavior. This is attributed to coalescence of the films. High-temperature furnace annealing diffused some of the dopants into the silicide film, reducing the surface concentrations at the TiSi{sub 2}-Si interface.

• OSTI ID: 6815308
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (USA) Vol. 37; ISSN IETDA; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ARSENIC
BORON
CURRENTS
DIFFUSION
ELECTRIC CURRENTS
ELEMENTS
FABRICATION
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
INTERFACES
ION IMPLANTATION
JUNCTION DIODES
LEAKAGE CURRENT
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM SILICIDES
TRANSITION ELEMENT COMPOUNDS