A new plasma-aided solid-source implantation method for ultra-shallow p{sup +}/n junction fabrication
- Univ. of Wisconsin, Madison, WI (United States). Engineering Research Center for Plasma-Aided Manufacturing
Ultra-shallow p{sup +}/n junctions have been fabricated for the application of sub-micron CMOS source/drain formation using a new plasma-aided solid-source implantation method. In this method, very thin film ({approximately} 0.7 nm thick) of boron is first sputter deposited on the surface of the silicon wafer from a solid-form boron target. The wafer is then immersed in Air plasma and biased with a series of negative voltage pulses in a Plasma Source Ion Implantation (PSII) chamber. The argon ions are extracted from the plasma sheath and are accelerated so that they bombard the wafer surface. This drives boron into the Si substrate by means of ion beam mixing. This results in a very shallow boron-doped layer. Dopant activation and damage removal are achieved via short-cycle rapid thermal annealing (RTA). The boron profiles are measured by Secondary Ion Mass Spectroscopy (SIMS). Recent results show that a 0.7-nm thick boron layer implanted with 3-keV argon at a dose of 4 {times} 10{sup 15} cm{sup {minus}2} and annealed at 950 C for 10 seconds show a peak boron concentration of 3 {times} 10{sup 20} cm{sup {minus}3}, and the concentration is more than two orders of magnitude lower at a depth of 20 nm.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 423021
- Report Number(s):
- CONF-960634-; TRN: IM9707%%328
- Resource Relation:
- Conference: 1996 IEEE international conference on plasma science, Boston, MA (United States), 3-5 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of IEEE conference record -- Abstracts: 1996 IEEE international conference on plasma science; PB: 324 p.
- Country of Publication:
- United States
- Language:
- English
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