Antisite-related defects in plastically deformed GaAs

Journal Article · Tue Apr 15 00:00:00 EST 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.33.5880· OSTI ID:5978141

Omling, P; Weber, E R; Samuelson, L

Optical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured As/sub Ga/ containing defects produced during deformation. Since the As/sub Ga/-related defects produced by plastic deformation anneal at Tapprox.650 /sup 0/C, the implication for any correlation between EL2 and As/sub Ga/ antisites is that only those As/sub Ga/-related EPR centers which are stable up to at least 950 /sup 0/C can possibly be responsible for the EL2 level.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5978141
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 33:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ABSORPTIVITY
CRYSTAL DEFECTS
DEFORMATION
ELECTRON SPIN RESONANCE
HIGH TEMPERATURE
VERY HIGH TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
MAGNETIC RESONANCE
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RESONANCE
360603* - Materials- Properties