Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs
- Center for Advanced Materials, Lawrence Berkeley Laboratory, and Department of Materials Science, University of California, Berkeley, California 94720 (US)
Temperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (As{sub Ga}{sup +}) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically deformed, and neutron-irradiated GaAs. Results show that there is a class of similar As{sub Ga}{sup +}-related defects that differ in the local stress fields they experience. Their corresponding EPR quadruplet spin-lattice-relaxation time decreases as local stress increases. The photoquenching property of As{sub Ga}{sup +}-related defects can be suppressed by high local stress fields. Furthermore, it is shown that {ital EL}2 is an As{sub Ga}{sup +}-related defect which is in the lowest stress field of this class of defects.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5613601
- Journal Information:
- Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 40:6; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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