Persistent photoquenching and anion antisite defects in neutron-irradiated GaAs

Journal Article · Sun Mar 05 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100804· OSTI ID:6550403

Goltzene, A; Meyer, B; Schwab, C

A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As/sup 4+//sub Ga/ centers as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As/sup 4+//sub Ga/ centers can be split into two subsets.

• Research Organization: Groupe ''Recherches Physiques et Materiaux,'' Centre de Recherches Nucleaires, Universite Louis Pasteur, 23, Rue du Loess, 67037 Strasbourg Cedex, France
• OSTI ID: 6550403
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANIONS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
HEAT TREATMENTS
IONS
MAGNETIC RESONANCE
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RESONANCE