Formation of As/sub Ga/ antisite defects in electron-irradiated GaAs

Journal Article · Mon Jul 15 00:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336284· OSTI ID:5489585

von Bardeleben, H J; Bourgoin, J C

The anion antisite As/sub Ga/ formation in electron-irradiated GaAs of various compositions and dopings has been studied by electron paramagnetic resonance. The results are interpreted in a new model based on carrier recombination enhanced mobile arsenic interstitials exchanging sites with gallium-substituted impurities.

• Research Organization: Groupe de Physique des Solides de l'Ecole Normale Superieure, Universite Paris VII, Tour 23, 2 Place Jussieu, 75251 Paris Cedex 05, France
• OSTI ID: 5489585
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHEMICAL COMPOSITION
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ELECTRON COLLISIONS
ELECTRON SPIN RESONANCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MAGNETIC RESONANCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
RECOMBINATION
RESONANCE
VACANCIES