Identification of As/sub Ga/ antisites in plastically deformed GaAs

Journal Article · Wed Sep 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331577· OSTI ID:5078028

Weber, E R; Ennen, H; Kaufmann, U; Windscheif, J; Schneider, J; Wosinski, T

As/sub Ga/ antisite defects formed during plastic deformation of GaAs are identified by electron paramagnetic resonance (EPR) measurements. From photo-EPR results it can be concluded that the two levels of this double donor are located near E/sub c/ -0.75 eV and E/sub v/ +0.5 eV. These values are coincident with the Fermi level pinning energies at Schottky barriers. The upper level can be related to the ''main electron trap'' EL2 in GaAs. Photoluminescence experiments before and after thermal annealing suggest that As/sub Ga/ defects reduce the near band edge luminescence efficiency. A dislocation climb model is presented which is able to explain As/sub Ga/ formation during dislocation movement. The production of As/sub Ga/ antisites during dislocation motion under injection conditions in light emitting devices may thus be connected with degradation of the light output.

• Research Organization: II. Physikalisches Institut, Universitaet zu Koeln, D 5000 Koeln 41, West Germany
• OSTI ID: 5078028
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON SPIN RESONANCE
ENERGY LEVELS
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
LIGHT EMITTING DIODES
LINE DEFECTS
LUMINESCENCE
MAGNETIC RESONANCE
MECHANICAL PROPERTIES
PHOTOLUMINESCENCE
PLASTICITY
PNICTIDES
POTENTIALS
RESONANCE
SCHOTTKY EFFECT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRAPS