Rapid Thermal Processing of Implanted GaN up to 1500 Degree C
GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are {le}2 x 10{sup {minus}13} cm{sup 2} {center_dot} s{sup {minus}1} at 1400 C, except Be, which displays damage-enhanced diffusion at 900 C and is immobile once the point defect concentration is removed. Activation efficiency of {approximately}90% is obtained for Si at 1400 C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 C compared to previous results at 1100 C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 3227
- Report Number(s):
- SAND99-0218J; MIJNF7; TRN: US0101396
- Journal Information:
- MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1; Other Information: PBD: 27 Jan 1999; ISSN 1092-5783
- Country of Publication:
- United States
- Language:
- English
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