Ultra High Temperature Rapid Thermal Annealing of GaN

Journal Article · Fri Nov 20 04:00:00 EST 1998 · Materials Issues in Semiconductor Process

DOI:https://doi.org/10.1016/S1369-8001(98)00037-7· OSTI ID:1958

Cao, X A ^[1]; Fu, M; Han, J; Pearton, S J; Rieger, D J; Sekhar, J A; Shul, R J; Singh, R K; Wilson, R G; Zolper, J C

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1. Sandia National Laboratories

All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on A1203 substrates. Annealing was performed at 1100- 1500 C, using AIN encapsulation. Activation percentages of >90Y0 were obtained for Si+ implantation annealed at 1400 C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450 C.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1958
• Report Number(s): SAND98-2592J; ON: DE00001958
• Journal Information: Materials Issues in Semiconductor Process, Journal Name: Materials Issues in Semiconductor Process
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
Annealing
Gallium Nitrides
Semiconductor Materials
Thin Films