Ultra-high implant activation efficiency in GaN using novel high temperature RTP system
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; and others
Si{sup +} implant activation efficiencies above 90%, even at doses of 5 {times} 10{sup 15} cm{sup {minus}2}, have been achieved in GaN by RTP at 1,400--1,500 C for 10 secs. The annealing system utilizes with MoSi{sub 2} heating elements capable of operation up to 1,900 C, producing high heating and cooling rates (up to 100 C{center_dot}s{sup {minus}1}). Unencapsulated GaN show severe surface pitting at 1,300 C, and complete loss of the film by evaporation at 1,400 C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf-magnetron reactively sputtered or MOMBE-grown AlN thin films provide protection against GaN surface degradation up to 1,400 C, where peak electron concentrations of {approximately} 5 {times} 10{sup 20} cm{sup {minus}3} can be achieved in Si-implanted GaN. SIMS profiling showed little measurable redistribution of Si, suggesting D{sub Si} {le} 10{sup {minus}13} cm{sup 2}{center_dot}s{sup {minus}1} at 1,400 C . The implant activation efficiency decreases at higher temperatures, which may result from Si{sub Ga} to Si{sub N} site switching and resultant self-compensation.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 672011
- Report Number(s):
- SAND--98-0950C; CONF-980405--; ON: DE98004759; BR: YN0100000; CNN: Grant F19628-97-C-0092
- Country of Publication:
- United States
- Language:
- English
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