Ultrahigh Si{sup +} implant activation efficiency in GaN using a high-temperature rapid thermal process system
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Micropyretics Heaters International, Inc., Cincinnati, Ohio 45212 (United States)
- Office of Naval Research, Arlington, Virginia 22217 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Consultant, Stevenson Ranch, California 91381 (United States)
Si{sup +} implant activation efficiencies above 90{percent}, even at doses of 5{times}10{sup 15}thinspcm{sup {minus}2}, have been achieved in GaN by rapid thermal processing at 1400{endash}1500thinsp{degree}C for 10 s. The annealing system utilizes molybdenum intermetallic heating elements capable of operation up to 1900thinsp{degree}C, producing high heating and cooling rates (up to 100thinsp{degree}Cthinsps{sup {minus}1}). Unencapsulated GaN shows severe surface pitting at 1300thinsp{degree}C and complete loss of the film by evaporation at 1400thinsp{degree}C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf magnetron reactively sputtered or metal organic molecular beam epitaxy-grown AlN thin films provides protection against GaN surface degradation up to 1400thinsp{degree}C, where peak electron concentrations of {approximately}5{times}10{sup 20}thinspcm{sup {minus}3} can be achieved in Si-implanted GaN. Secondary ion mass spectrometry profiling showed little measurable redistribution of Si, suggesting D{sub Si}{le}10{sup {minus}13}thinspcm{sup 2}thinsps{sup {minus}1} at 1400thinsp{degree}C. The implant activation efficiency decreases at higher temperatures, which may result from Si{sub Ga} to Si{sub N} site switching and resultant self-compensation. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 638739
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 73; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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