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Title: Thermal resistance of ultra-small-diameter disk microlasers

The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 × 10{sup −3} (K cm{sup 2})/W, and the thermal resistance is 120–20°C/mW.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [1] ; ;  [2]
  1. St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469954
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY