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Microdisk Injection Lasers for the 1.27-μm Spectral Range

Journal Article · · Semiconductors
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  1. St. Petersburg National Research Academic University, Russian Academy of Sciences (Russian Federation)
  2. Ioffe Physical–Technical Institute (Russian Federation)
  3. Innolume GmbH (Germany)
Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 μm at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 × 10–3 °C cm{sup 2}/W.
OSTI ID:
22645590
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 50; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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